2SK2272-01R Datasheet and Replacement

2SK2272-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS= 30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsEquivalent ci

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2275SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2275 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-state ResistanceRDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2

2SK2274 5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK2274 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Y | = 2.5 S (typ.) fs Low leakage current : I = 300 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 1.5

Ordering number:ENN5047N-Channel Silicon MOSFET2SK2273Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK2273]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

Silicon MOS FETs (Small Signal) 2SK22772SK2277Silicon N-Channel MOSUnit : mmFor switching1.5 0.14.5 0.11.6 0.2 Features Low ON-resistance RDS(on)45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by0.4 0.080.4 0.040.5 0.08magazine packing are available.1.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta

Power F-MOS FETs 2SK22762SK2276Silicon N-Channel MOSUnit : mmFor switching6.5 0.15.3 0.14.35 0.1 Features3.0 0.1Low ON-resistance RDS(on)High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit1 : Gate1 2 32 : DrainDrain-Source breakdown voltage VDSS 60 V

isc N-Channel MOSFET Transistor 2SK2274DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr