All MOSFET. IRF9541 Datasheet

 

IRF9541 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9541

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO220

IRF9541 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9541 Datasheet (PDF)

1.1. irf9540 irf9541 irf9542 irf9543.pdf Size:352K _no

IRF9541
IRF9541

 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com

4.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _upd-mosfet

IRF9541
IRF9541

PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150°C Operating Temperature l Fast Switching RDS(on) = 117mΩ l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF9540NS/L ID = -23A S l P-Channel l Lead-Free D Description D Features of this design are a 150

4.2. irf9540pbf.pdf Size:203K _upd-mosfet

IRF9541
IRF9541

IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) ()VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • 175 °C Operating Temperature Qgs (nC) 14 • Fast Switching Qgd (nC) 29 • Ease of Paralleling Configuration Single • Simple Drive Requir

 4.3. irf9540npbf.pdf Size:922K _upd-mosfet

IRF9541
IRF9541

PD - 94790A IRF9540NPbF • Lead-Free www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com IRF9540NPbF www.irf.com 5 IRF9540NPbF 6 www.irf.com IRF9540NPbF www.irf.com 7 IRF9540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185)

4.4. irf9540s irf9540spbf.pdf Size:197K _upd-mosfet

IRF9541
IRF9541

IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) ()VGS = - 10 V 0.20 • Available in Tape and Reel Qg (Max.) (nC) 61 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 14 • P-Channel Qgd (nC) 29 • 175 °C Operating Temperature • Fast

 4.5. irf9540 rf1s9540sm.pdf Size:99K _fairchild_semi

IRF9541
IRF9541

IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs • 19A, 100V These are P-Channel enhancement mode silicon gate power • rDS(ON) = 0.200Ω field effect transistors. They are advanced power MOSFETs • Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

4.6. irf9540s.pdf Size:321K _international_rectifier

IRF9541
IRF9541

PD - 95699 IRF9540SPbF Lead-Free 9/10/04 Document Number: 91079 www.vishay.com 1 IRF9540SPbF Document Number: 91079 www.vishay.com 2 IRF9540SPbF Document Number: 91079 www.vishay.com 3 IRF9540SPbF Document Number: 91079 www.vishay.com 4 IRF9540SPbF Document Number: 91079 www.vishay.com 5 IRF9540SPbF Document Number: 91079 www.vishay.com 6 IRF9540SPbF Peak Diode Recove

4.7. irf9540.pdf Size:926K _international_rectifier

IRF9541
IRF9541

PD - 94884 IRF9540PbF Lead-Free 12/11/03 Document Number: 91078 www.vishay.com 1 IRF9540PbF Document Number: 91078 www.vishay.com 2 IRF9540PbF Document Number: 91078 www.vishay.com 3 IRF9540PbF Document Number: 91078 www.vishay.com 4 IRF9540PbF Document Number: 91078 www.vishay.com 5 IRF9540PbF Document Number: 91078 www.vishay.com 6 IRF9540PbF TO-220AB Package Outlin

4.8. irf9540n.pdf Size:125K _international_rectifier

IRF9541
IRF9541

PD - 91437B IRF9540N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast Switching RDS(on) = 0.117? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

4.9. irf9540ns.pdf Size:286K _international_rectifier

IRF9541
IRF9541

PD - 91483D IRF9540NS/L HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175C Operating Temperature RDS(on) = 0.117? l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

4.10. irfp9140-43 irf9540-43.pdf Size:378K _samsung

IRF9541
IRF9541



4.11. irf9540s sihf9540s.pdf Size:172K _vishay

IRF9541
IRF9541

IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) (?)VGS = - 10 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 14 P-Channel Qgd (nC) 29 175 C Operating Temperature Fast Switching Configurat

4.12. irf9540 sihf9540.pdf Size:202K _vishay

IRF9541
IRF9541

IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 175 C Operating Temperature Qgs (nC) 14 Fast Switching Qgd (nC) 29 Ease of Paralleling Configuration Single Simple Drive Requirements S Complia

Datasheet: IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 , IRF9540N , IRF9540NL , IRF9540NS , IRFP460 , IRF9542 , IRF9543 , IRF9610 , IRF9610S , IRF9611 , IRF9612 , IRF9613 , IRF9620 .

 

 
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