2SK3326B Datasheet and Replacement
Type Designator: 2SK3326B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 6.5
nS
Cossⓘ -
Output Capacitance: 210
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85
Ohm
Package:
TO220F
- MOSFET Cross-Reference Search
2SK3326B Datasheet (PDF)
..1. Size:257K renesas
2sk3326b.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
7.1. Size:230K renesas
2sk3326.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
7.2. Size:279K inchange semiconductor
2sk3326.pdf 
isc N-Channel MOSFET Transistor 2SK3326FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.1. Size:91K 1
2sk3322 2sk3322-s 2sk3322-zj 2sk3322-zk.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3322SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE The 2SK3322 is N-Channel DMOS FET device that 2SK3322 TO-220AB (MP-25)features a low gate charge and excellent switching 2SK3322-S TO-262characteristics, and designed for high voltage 2SK3322-ZJ TO-263(MP-25ZJ)applications such as switch
8.2. Size:77K 1
2sk3325 2sk3325-s 2sk3325-zj.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3325SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that featuresPART NUMBER PACKAGEa low gate charge and excellent switching characteristics, and2SK3325 TO-220ABdesigned for high voltage applications such as switching power2SK3325-S TO-262supply, AC adapter.
8.3. Size:305K toshiba
2sk3320 .pdf 
2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications Unit: mm Two devices in a ultra super mini (five pins) package High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = -50 V Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
8.4. Size:305K toshiba
2sk3320.pdf 
2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications Unit: mm Two devices in a ultra super mini (five pins) package High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = -50 V Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
8.5. Size:278K renesas
2sk3324.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:43K kexin
2sk3325.pdf 
SMD Type ICSMD Type TransistorsMOS Field Effect Transistor2SK3325TO-263Unit: mm+0.2Features4.57-0.21.27+0.1-0.1Low gate charge:QG = 22 nC TYP. (VDD = 400 V, VGS =10V, ID =10A)Gate voltage rating: 30 VLow on-state resistance0.1max1.27+0.1-0.1RDS(on) =0.85MAX. (VGS =10V, ID =5.0 A)+0.1Avalanche capability ratings0.81-0.12.541Gate2.54+0.2 +0.2-0.
8.7. Size:43K kexin
2sk3322.pdf 
SMD Type MOSFETMOS Field Effect Transistor2SK3322TO-263Unit: mmFeatures +0.24.57-0.2+0.11.27-0.1Low gate chargeQG = 15 nC TYP. (VDD = 450V, VGS =10 V, ID =5.5A)Gate voltage rating 30 V+0.10.1max1.27-0.1Low on-state resistanceRDS(on) =2.2 MAX. (VGS =10V, ID =2.8A)+0.10.81-0.12.54Avalanche capability ratings1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.
8.8. Size:357K inchange semiconductor
2sk3322-zj.pdf 
isc N-Channel MOSFET Transistor 2SK3322-ZJFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.9. Size:288K inchange semiconductor
2sk3325.pdf 
isc N-Channel MOSFET Transistor 2SK3325FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.10. Size:282K inchange semiconductor
2sk3322-s.pdf 
isc N-Channel MOSFET Transistor 2SK3322-SFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.11. Size:288K inchange semiconductor
2sk3322.pdf 
isc N-Channel MOSFET Transistor 2SK3322FEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.12. Size:356K inchange semiconductor
2sk3325-zj.pdf 
isc N-Channel MOSFET Transistor 2SK3325-ZJFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.13. Size:282K inchange semiconductor
2sk3325-s.pdf 
isc N-Channel MOSFET Transistor 2SK3325-SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.14. Size:357K inchange semiconductor
2sk3322-zk.pdf 
isc N-Channel MOSFET Transistor 2SK3322-ZKFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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History: BSS84WT1
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| VT6K1
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| 2N7261U
Keywords - 2SK3326B MOSFET datasheet
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2SK3326B equivalent finder
2SK3326B lookup
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