2SK3353-S
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3353-S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 95
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 82
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 90
nC
trⓘ - Rise Time: 1550
nS
Cossⓘ -
Output Capacitance: 780
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
TO262
2SK3353-S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3353-S
Datasheet (PDF)
..1. Size:283K inchange semiconductor
2sk3353-s.pdf
isc N-Channel MOSFET Transistor 2SK3353-SFEATURESDrain Current : I = 82A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
0.1. Size:39K nec
2sk3353-s-z.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3353SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3353 TO-220AB2SK3353-S TO-262FEATURES2SK3353-Z TO-220SMD Super low on-state resistance: RDS(on)1 = 9.5 m MAX. (VGS
6.1. Size:357K inchange semiconductor
2sk3353-z.pdf
isc N-Channel MOSFET Transistor 2SK3353-ZFEATURESDrain Current : I = 82A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
7.1. Size:289K inchange semiconductor
2sk3353.pdf
isc N-Channel MOSFET Transistor 2SK3353FEATURESDrain Current : I = 82A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
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