2SK3355-Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3355-Z
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 83
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 1450
nS
Cossⓘ -
Output Capacitance: 1500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058
Ohm
Package: TO263-2L
2SK3355-Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3355-Z
Datasheet (PDF)
..1. Size:357K inchange semiconductor
2sk3355-z.pdf
isc N-Channel MOSFET Transistor 2SK3355-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
0.1. Size:357K inchange semiconductor
2sk3355-zj.pdf
isc N-Channel MOSFET Transistor 2SK3355-ZJFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
6.1. Size:214K renesas
2sk3355-s-z-zj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
6.2. Size:283K inchange semiconductor
2sk3355-s.pdf
isc N-Channel MOSFET Transistor 2SK3355-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP344
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