All MOSFET. 2SK4082-S17 Datasheet

 

2SK4082-S17 Datasheet and Replacement


   Type Designator: 2SK4082-S17
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220F
 
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2SK4082-S17 Datasheet (PDF)

 ..1. Size:290K  renesas
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2SK4082-S17

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:280K  inchange semiconductor
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2SK4082-S17

isc N-Channel MOSFET Transistor 2SK4082FEATURESDrain Current : I = 3.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.1. Size:64K  1
2sk4086ls.pdf pdf_icon

2SK4082-S17

Ordering number : ENA0554D 2SK4086LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4086LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio

 8.2. Size:233K  1
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2SK4082-S17

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK4081SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low on-state resistance RDS(on) = 5 MAX. (VGS = 10 V, ID = 1.0 A)

Datasheet: 2SK4066-DL-E , 2SK4066-E , 2SK4069-S27-AY , 2SK4069-ZK-E1-AY , 2SK4069-ZK-E2-AY , 2SK4080-S27-AY , 2SK4080-ZK-E1-AY , 2SK4080-ZK-E2-AY , AON7410 , 2SK4084LS , 2SK4090-S27-AY , 2SK4090-ZK-E1-AY , 2SK4090-ZK-E2-AY , 2SK4091-S27-AY , 2SK4091-ZK-E1-AY , 2SK4091-ZK-E2-AY , 2SK4092 .

History: 2SK2273 | IPD78CN10NG | IRFW624A

Keywords - 2SK4082-S17 MOSFET datasheet

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