2SK596S-B
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK596S-B
Marking Code: 596S
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.1
W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 0.001
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2500
Ohm
Package:
SC72
2SK596S-B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK596S-B
Datasheet (PDF)
..1. Size:240K onsemi
2sk596s-b.pdf
Ordering number : ENA09442SK596SN-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.0mS, SPAFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET processSpecificationsAbsolut
7.1. Size:313K sanyo
2sk596s.pdf
2SK596SOrdering number : ENA0944SANYO SemiconductorsDATA SHEETN-channel Silicon Juncton FETElectret Condenser Microphone2SK596SApplicationsFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic
8.1. Size:85K blue-rocket-elect
2sk596.pdf
2SK596 N-CHANNEL Junction FET/N Purpose: Especially suited for use in audio,telephone capacitor microphones. Features:Excellent voltage characteristic,excellent transient characteristic. /Absolute maximum ratings(Ta=25)
9.2. Size:53K interfet
2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf
Databook.fxp 1/14/99 2:03 PM Page D-2D-2 01/99Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK17 2SK40 2SK59 2SK105JapaneseIFN17 IFN40 IFN59 IFN105InterFETNJ16 NJ16 NJ16 NJ16ProcessUnit N N N NParameters Conditions Limit Channel Channel Channel ChannelVBVGSS IG = 1.0 A 20 50 30 50MinnA 0.10 1.0 1.0 1.0IGSS VGS = ( )
9.3. Size:279K inchange semiconductor
2sk591.pdf
isc N-Channel MOSFET Transistor 2SK591FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.055(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
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