2SK762 Datasheet and Replacement
Type Designator: 2SK762
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
tonⓘ - Turn-on Time: 30
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
TO220F
- MOSFET Cross-Reference Search
2SK762 Datasheet (PDF)
..2. Size:234K inchange semiconductor
2sk762.pdf 
isc N-Channel MOSFET Transistor 2SK762DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver
9.3. Size:237K inchange semiconductor
2sk768.pdf 
isc N-Channel MOSFET Transistor 2SK768DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.4. Size:234K inchange semiconductor
2sk767.pdf 
isc N-Channel MOSFET Transistor 2SK767DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver
9.5. Size:234K inchange semiconductor
2sk769.pdf 
isc N-Channel MOSFET Transistor 2SK769DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.6. Size:237K inchange semiconductor
2sk764a.pdf 
isc N-Channel MOSFET Transistor 2SK764ADESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conv
9.7. Size:234K inchange semiconductor
2sk766.pdf 
isc N-Channel MOSFET Transistor 2SK766DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver
9.8. Size:235K inchange semiconductor
2sk765.pdf 
isc N-Channel MOSFET Transistor 2SK765DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conv
9.9. Size:242K inchange semiconductor
2sk765a.pdf 
isc N-Channel MOSFET Transistor 2SK765ADESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, con
9.10. Size:237K inchange semiconductor
2sk764.pdf 
isc N-Channel MOSFET Transistor 2SK764DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.11. Size:235K inchange semiconductor
2sk763.pdf 
isc N-Channel MOSFET Transistor 2SK763DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver
Datasheet: 2SK556
, 2SK557
, 2SK565
, 2SK568
, 2SK596S-B
, 2SK528
, 2SK735
, 2SK738-Z
, 2N60
, 2SK762A
, 2SK764
, 2SK764A
, 2SK765
, 2SK765A
, 2SK768
, 2SK769
, 2SK1225
.
History: FTP18N06
| DH150N12B
| 12N65KG-TF1-T
| 2SK1335S
| R5016ANJ
| BSB280N15NZ3G
| ELM13401CA
Keywords - 2SK762 MOSFET datasheet
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