2SK764 Specs and Replacement
Type Designator: 2SK764
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 70 nS
Cossⓘ -
Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO3P
- MOSFET ⓘ Cross-Reference Search
2SK764 datasheet
..2. Size:237K inchange semiconductor
2sk764.pdf 
isc N-Channel MOSFET Transistor 2SK764 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
0.1. Size:237K inchange semiconductor
2sk764a.pdf
isc N-Channel MOSFET Transistor 2SK764A DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv... See More ⇒
9.3. Size:237K inchange semiconductor
2sk768.pdf
isc N-Channel MOSFET Transistor 2SK768 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.4. Size:234K inchange semiconductor
2sk767.pdf
isc N-Channel MOSFET Transistor 2SK767 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.5. Size:234K inchange semiconductor
2sk769.pdf
isc N-Channel MOSFET Transistor 2SK769 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.6. Size:234K inchange semiconductor
2sk762.pdf
isc N-Channel MOSFET Transistor 2SK762 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.7. Size:234K inchange semiconductor
2sk766.pdf
isc N-Channel MOSFET Transistor 2SK766 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.8. Size:235K inchange semiconductor
2sk765.pdf
isc N-Channel MOSFET Transistor 2SK765 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv... See More ⇒
9.9. Size:242K inchange semiconductor
2sk765a.pdf
isc N-Channel MOSFET Transistor 2SK765A DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, con... See More ⇒
9.10. Size:235K inchange semiconductor
2sk763.pdf
isc N-Channel MOSFET Transistor 2SK763 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
Detailed specifications: 2SK565, 2SK568, 2SK596S-B, 2SK528, 2SK735, 2SK738-Z, 2SK762, 2SK762A, SI2302, 2SK764A, 2SK765, 2SK765A, 2SK768, 2SK769, 2SK1225, 2SK1244, 2SK1246
Keywords - 2SK764 MOSFET specs
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