All MOSFET. 2SK1225 Datasheet

 

2SK1225 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1225
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO3PFM

 2SK1225 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1225 Datasheet (PDF)

 ..1. Size:89K  no
 2sk1225 2sk1206.pdf

2SK1225 2SK1225

 8.1. Size:249K  1
 2sk1221.pdf

2SK1225 2SK1225

FUJI POWER MOSFET2SK1221N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS=30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaximum ra

 8.2. Size:34K  panasonic
 2sk1228.pdf

2SK1225 2SK1225

Silicon MOS FETs (Small Signal) 2SK12282SK1228Silicon N-Channel MOSUnit : mmFor switching+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching1 Wide frequency band Gate-protection diode built-in3 2.5V drive possible2 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Drain-Source voltage VDS 50 V0.4

 8.3. Size:61K  inchange semiconductor
 2sk1222.pdf

2SK1225 2SK1225

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1222 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltag

 8.4. Size:63K  inchange semiconductor
 2sk1224.pdf

2SK1225 2SK1225

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1224 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRLML0030PBF-1 | FDS8435A | 2SK889 | AFN3030

 

 
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