All MOSFET. 2SK1250 Datasheet

 

2SK1250 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1250
   Marking Code: K1250
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 130 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: MTO3P

 2SK1250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1250 Datasheet (PDF)

 ..1. Size:120K  shindengen
2sk1250.pdf

2SK1250 2SK1250

 8.1. Size:90K  renesas
2sk1254.pdf

2SK1250 2SK1250

2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa

 8.2. Size:103K  renesas
rej03g0917 2sk1254lsds.pdf

2SK1250 2SK1250

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:37K  panasonic
2sk1259.pdf

2SK1250 2SK1250

Power F-MOS FETs 2SK12592SK1259Silicon N-Channel Power F-MOSUnit : mm 3.3 0.2 Features20.0 0.5 5.0 0.33.0Low ON-resistance RDS(on) : RDS(on)1= 0.012(typ)High-speed switching : tf = 700ns(typ)No secondary breakdownLow-voltage drive1.5 Applications1.52.0 0.3DC-DC converter2.7 0.33.0 0.3Non-contact relay1.0 0.2 0.6 0.2Solenoid drive

 8.4. Size:34K  panasonic
2sk1255.pdf

2SK1250 2SK1250

Power F-MOS FETs 2SK12552SK1255Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)1= 0.135(typ)5.5 0.2 2.7 0.2High-speed switching : tf= 53ns(typ)No secondary breakdown3.1 0.1Low-voltage drive Applications1.3 0.2DC-DC converter1.4 0.1Non-contact relay+0.20.5 -0.1 0.8 0.1Solenoid driveMo

 8.5. Size:161K  sony
2sk125.pdf

2SK1250 2SK1250

 8.6. Size:274K  inchange semiconductor
2sk1254l.pdf

2SK1250 2SK1250

isc N-Channel MOSFET Transistor 2SK1254LFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.7. Size:265K  inchange semiconductor
2sk1254s.pdf

2SK1250 2SK1250

isc N-Channel MOSFET Transistor 2SK1254SFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFH26N60Q

 

 
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