2SK2527-01MR Specs and Replacement
Type Designator: 2SK2527-01MR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO220F
2SK2527-01MR substitution
- MOSFET ⓘ Cross-Reference Search
2SK2527-01MR datasheet
2sk2527-01mr.pdf
N-channel MOS-FET 2SK2527-01MR FAP-II Series 900V 3,6 5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒
2sk2520-01mr.pdf
N-channel MOS-FET 2SK2520-01MR FAP-II Series 200V 0,4 10A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equi... See More ⇒
2sk2522-01mr.pdf
N-channel MOS-FET 2SK2522-01MR FAP-II Series 200V 0,18 18A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ... See More ⇒
Detailed specifications: 2SK2411-Z, 2SK2414-Z, 2SK2415-Z, 2SK2475, 2SK2499-Z, 2SK2503TL, 2SK2504TL, 2SK2513-Z, K2611, 2SK2528-01, 2SK2561-01R, 2SK2562-01R, 2SK3365, 2SK3365-Z, 2SK3366, 2SK3366-Z, 2SK3367
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