2SK258H Datasheet and Replacement
Type Designator: 2SK258H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 25 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.12 Ohm
Package: TO3
2SK258H substitution
2SK258H Datasheet (PDF)
rej03g1020 2sk2586ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2586.pdf

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange
2sk2580.pdf

Power F-MOS FETs 2SK25802SK2580(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08
Datasheet: 2SK1063 , 2SK1064 , 2SK2320 , 2SK2328 , 2SK2329S , 2SK2407 , 2SK2563 , 2SK258 , AO3400 , 2SK259 , 2SK260 , 2SK260H , 2SK3402 , 2SK3402-ZK , 2SK3404 , 2SK3405 , 2SK3424 .
History: BUZ73AL | MP4N150 | SSM3K329R
Keywords - 2SK258H MOSFET datasheet
2SK258H cross reference
2SK258H equivalent finder
2SK258H lookup
2SK258H substitution
2SK258H replacement
History: BUZ73AL | MP4N150 | SSM3K329R



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