IRF9630S MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF9630S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29(max) nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO263

IRF9630S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF9630S Datasheet (PDF)

..1. Size:1045K international rectifier
irf9630spbf.pdf

PD- 95771IRF9630SPbF Lead-Free06/06/05Document Number: 91085 www.vishay.com1IRF9630SPbFDocument Number: 91085 www.vishay.com2IRF9630SPbFDocument Number: 91085 www.vishay.com3IRF9630SPbFDocument Number: 91085 www.vishay.com4IRF9630SPbFDocument Number: 91085 www.vishay.com5IRF9630SPbFDocument Number: 91085 www.vishay.com6IRF9630SPbFPeak Diode R

..2. Size:179K international rectifier
irf9630s.pdf

..3. Size:172K vishay
irf9630spbf sihf9630s.pdf

IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single

..4. Size:171K vishay
irf9630s sihf9630s.pdf

7.1. Size:175K international rectifier
irf9630.pdf

7.2. Size:2142K international rectifier
irf9630pbf.pdf

PD - 94958IRF9630PbF Lead-Free01/29/04Document Number: 91084 www.vishay.com1IRF9630PbFDocument Number: 91084 www.vishay.com2IRF9630PbFDocument Number: 91084 www.vishay.com3IRF9630PbFDocument Number: 91084 www.vishay.com4IRF9630PbFDocument Number: 91084 www.vishay.com5IRF9630PbFDocument Number: 91084 www.vishay.com6IRF9630PbFTO-220AB Package O

7.3. Size:103K fairchild semi
irf9630 rf1s9630sm.pdf

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a

7.4. Size:504K samsung
irf9230 irf9231 irf9232 irf9233 irfp9230 irfp9231 irfp9232 irfp9233 irf9630 irf9631 irf9632 irf9633.pdf

7.5. Size:519K samsung
irfp9230-33 irf9230-33 irf9630-33.pdf

7.6. Size:197K vishay
irf9630pbf sihf9630.pdf

IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH

7.7. Size:197K vishay
irf9630 sihf9630.pdf