2SK3433-S MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3433-S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 47 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 320 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO262
2SK3433-S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3433-S Datasheet (PDF)
1.1. 2sk3433-s-z-zj.pdf 
Size:75K _update
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3433 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3433 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3433 TO-220AB 2SK3433-S TO-262 FEATURES 2SK3433-ZJ TO-263 • Super low on-state resistance: 2SK3433-Z TO-220SMDNote RDS(on)1 = 26 mΩ MAX.
4.1. 2sk3431-s-z-zj.pdf Size:206K _update
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
4.2. 2sk3435.pdf Size:46K _update
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3435 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3435 TO-220AB 2SK3435-S TO-262 FEATURES 2SK3435-Z TO-220SMD • Super low on-state resistance: RDS(on)1 = 14 mΩ
4.3. 2sk3434-s-z-zj.pdf Size:206K _update
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
4.4. 2sk3435-s-z-zj.pdf Size:206K _update
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
4.5. 2sk3432-s-z-zj.pdf Size:206K _update
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
4.6. 2sk3439.pdf Size:184K _toshiba
2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3439 DC-DC Converter Applications Unit: mm Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 m? (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.
4.7. 2sk3438.pdf Size:207K _toshiba
2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications • Low drain-source ON resistance: RDS (ON) = 0.74 ? (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) • Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V
4.8. 2sk3437.pdf Size:221K _toshiba
2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications • Low drain-source ON resistance: RDS (ON) = 0.74 ? (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) • Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V
4.9. 2sk3430.pdf Size:48K _nec
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3430 TO-220AB 2SK3430-S TO-262 FEATURES 2SK3430-Z TO-220SMD • Super low on-state resistance: RDS(on)1 = 7.3 m? MAX.
4.10. 2sk3430-zj.pdf Size:995K _kexin
SMD Type MOSFET N-Channel MOSFET 2SK3430-ZJ ■ Features ● VDS S = 40V ● ID = 80 A (VGS = 10V) ● RDS(ON) ＜ 7.3mΩ (VGS = 10V) ● RDS(ON) ＜ 15mΩ (VGS = 4V) ● Low Ciss: Ciss = 2800 pF TYP. Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage
4.11. 2sk3434-zj.pdf Size:994K _kexin
SMD Type MOSFET N-Channel MOSFET 2SK3434-ZJ ■ Features ● VDS S = 60V ● ID = 48 A (VGS = 10V) ● RDS(ON) ＜ 20mΩ (VGS = 10V) ● RDS(ON) ＜ 31mΩ (VGS = 4V) ● Low Ciss: Ciss = 2100 pF TYP. Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage
Datasheet: 2SK3431-S , 2SK3431-Z , 2SK3431-ZJ , 2SK3432 , 2SK3432-S , 2SK3432-Z , 2SK3432-ZJ , 2SK3433 , IRFZ24N , 2SK3433-Z , 2SK3433-ZJ , 2SK643 , 2SK644 , 2SK646 , 2SK672 , 2SK673 , 2SK674 .
