IRF9631 Datasheet. Specs and Replacement

Type Designator: IRF9631  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 max nS

Cossⓘ - Output Capacitance: 300 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

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IRF9631 substitution

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IRF9631 datasheet

 ..1. Size:504K  samsung
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 ..2. Size:406K  harris semi
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 8.1. Size:1045K  international rectifier
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IRF9631

PD- 95771 IRF9630SPbF Lead-Free 06/06/05 Document Number 91085 www.vishay.com 1 IRF9630SPbF Document Number 91085 www.vishay.com 2 IRF9630SPbF Document Number 91085 www.vishay.com 3 IRF9630SPbF Document Number 91085 www.vishay.com 4 IRF9630SPbF Document Number 91085 www.vishay.com 5 IRF9630SPbF Document Number 91085 www.vishay.com 6 IRF9630SPbF Peak Diode R... See More ⇒

 8.2. Size:175K  international rectifier
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Detailed specifications: IRF9613, IRF9620, IRF9620S, IRF9621, IRF9622, IRF9623, IRF9630, IRF9630S, IRFP250N, IRF9632, IRF9633, IRF9640, IRF9640S, IRF9641, IRF9642, IRF9643, IRF9952

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