IRF9631 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9631
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Drain Current |Id|: 6.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO220
IRF9631 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9631 Datasheet (PDF)
1.1. irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf 
Size:406K _harris_semi
4.1. irf9630pbf.pdf Size:197K _upd-mosfet
IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 200 Available • Repetitive Avalanche Rated RDS(on) (Max.) (Ω)VGS = - 10 V 0.80 RoHS* • P-Channel Qg (Max.) (nC) 29 COMPLIANT • Fast Switching Qgs (nC) 5.4 • Ease of Paralleling Qgd (nC) 15 • Simple Drive Requirements Configuration Single • Compliant to RoH
4.2. irf9630spbf.pdf Size:172K _upd-mosfet
IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 • Surface Mount RDS(on) ()VGS = - 10 V 0.80 • Available in Tape and Reel Qg (Max.) (nC) 29 • Dynamic dV/dt Rating Qgs (nC) 5.4 • Repetitive Avalanche Rated • P-Channel Qgd (nC) 15 • Fast Switching Configuration Single
4.3. irf9630 rf1s9630sm.pdf Size:103K _fairchild_semi
IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs • 6.5A, 200V These are P-Channel enhancement mode silicon gate power • rDS(ON) = 0.800Ω field effect transistors. They are advanced power MOSFETs • Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a
4.4. irf9630.pdf Size:175K _international_rectifier
4.5. irf9630pbf.pdf Size:2142K _international_rectifier
PD - 94958 IRF9630PbF Lead-Free 01/29/04 Document Number: 91084 www.vishay.com 1 IRF9630PbF Document Number: 91084 www.vishay.com 2 IRF9630PbF Document Number: 91084 www.vishay.com 3 IRF9630PbF Document Number: 91084 www.vishay.com 4 IRF9630PbF Document Number: 91084 www.vishay.com 5 IRF9630PbF Document Number: 91084 www.vishay.com 6 IRF9630PbF TO-220AB Package Outlin
4.6. irf9630s.pdf Size:179K _international_rectifier
4.7. irf9630spbf.pdf Size:1045K _international_rectifier
PD- 95771 IRF9630SPbF Lead-Free 06/06/05 Document Number: 91085 www.vishay.com 1 IRF9630SPbF Document Number: 91085 www.vishay.com 2 IRF9630SPbF Document Number: 91085 www.vishay.com 3 IRF9630SPbF Document Number: 91085 www.vishay.com 4 IRF9630SPbF Document Number: 91085 www.vishay.com 5 IRF9630SPbF Document Number: 91085 www.vishay.com 6 IRF9630SPbF Peak Diode Recove
4.8. irfp9230-33 irf9230-33 irf9630-33.pdf Size:519K _samsung
4.9. irf9630s sihf9630s.pdf Size:171K _vishay
IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) (?)VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt Rating Qgs (nC) 5.4 Repetitive Avalanche Rated P-Channel Qgd (nC) 15 Fast Switching Configuration Single Ease of Parallel
4.10. irf9630 sihf9630.pdf Size:197K _vishay
IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) (Max.) (?)VGS = - 10 V 0.80 RoHS* P-Channel Qg (Max.) (nC) 29 COMPLIANT Fast Switching Qgs (nC) 5.4 Ease of Paralleling Qgd (nC) 15 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/9
Datasheet: IRF9613 , IRF9620 , IRF9620S , IRF9621 , IRF9622 , IRF9623 , IRF9630 , IRF9630S , IRF730 , IRF9632 , IRF9633 , IRF9640 , IRF9640S , IRF9641 , IRF9642 , IRF9643 , IRF9952 .
