2SK1483C Specs and Replacement
Type Designator: 2SK1483C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
Package: SOT89
2SK1483C substitution
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2SK1483C datasheet
2sk1483c.pdf
Preliminary Data Sheet 2SK1483C R07DS1263EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 19, 2015 Description The 2SK1483C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4... See More ⇒
2sk1483.pdf
SMD Type MOSFET N-Channel MOSFET 2SK1483 1.70 0.1 Features VDS (V) = 30V ID = 2 A RDS(ON) 800m (VGS = 4V) 0.42 0.1 0.46 0.1 RDS(ON) 400m (VGS = 10V) Complments the 2SJ197 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous... See More ⇒
2sk1489.pdf
2SK1489 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK1489 Chopper Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 300 A (max) (VDS = 800 V) Enhancement mode Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolu... See More ⇒
Detailed specifications: 2SK646, 2SK672, 2SK673, 2SK674, 2SK678, 2SK682, 2SK683, 2SK684, AO3407, 2SK1493-Z, 2SK1494-Z, 2SK1495-Z, 2SK1496-Z, 2SK1503, 2SK1503-01, 2SK1511, 2SK1512-01
Keywords - 2SK1483C MOSFET specs
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