All MOSFET. 2SK789 Datasheet

 

2SK789 Datasheet and Replacement


   Type Designator: 2SK789
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3PN
      - MOSFET Cross-Reference Search

 

2SK789 Datasheet (PDF)

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2SK789

isc N-Channel MOSFET Transistor 2SK789DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

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2SK789

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2SK789

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2SK789

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LNTA4001NT1G | IPI100N08S2-07 | AOD4126 | GSM3025S

Keywords - 2SK789 MOSFET datasheet

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