All MOSFET. 2SK789 Datasheet

 

2SK789 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK789
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3PN

 2SK789 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK789 Datasheet (PDF)

 ..1. Size:237K  inchange semiconductor
2sk789.pdf

2SK789
2SK789

isc N-Channel MOSFET Transistor 2SK789DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.1. Size:173K  nec
2sk787.pdf

2SK789
2SK789

 9.2. Size:182K  nec
2sk786.pdf

2SK789
2SK789

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 9.3. Size:158K  nec
2sk785.pdf

2SK789
2SK789

 9.4. Size:156K  nec
2sk784.pdf

2SK789
2SK789

 9.5. Size:238K  inchange semiconductor
2sk788.pdf

2SK789
2SK789

isc N-Channel MOSFET Transistor 2SK788DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.6. Size:237K  inchange semiconductor
2sk787.pdf

2SK789
2SK789

isc N-Channel MOSFET Transistor 2SK787DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching power suppliesactuatercontrol,and pulse circuits.ABSOLUTE MAXIMUM RATINGS(

 9.7. Size:236K  inchange semiconductor
2sk783.pdf

2SK789
2SK789

isc N-Channel MOSFET Transistor 2SK783FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as switching power supplies .ABSOLUTE M

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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