2SK789 Specs and Replacement

Type Designator: 2SK789

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO3PN

2SK789 substitution

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2SK789 datasheet

 ..1. Size:237K  inchange semiconductor
 2sk789.pdf pdf_icon

2SK789

isc N-Channel MOSFET Transistor 2SK789 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒

 9.1. Size:173K  nec
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2SK789

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 9.2. Size:182K  nec
 2sk786.pdf pdf_icon

2SK789

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 9.3. Size:158K  nec
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2SK789

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Detailed specifications: 2SK775, 2SK776, 2SK777, 2SK783, 2SK784, 2SK785, 2SK786, 2SK788, IRF540, 2SK790, 2SK1377, 2SK1378, 2SK1379, 2SK1380, 2SK1384, 2SK1384R, 2SK1385-01R

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