All MOSFET. 2SK1386-01 Datasheet

 

2SK1386-01 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1386-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO3P

 2SK1386-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1386-01 Datasheet (PDF)

 ..1. Size:171K  fuji
 2sk1386-01.pdf

2SK1386-01 2SK1386-01

 7.1. Size:203K  inchange semiconductor
 2sk1386.pdf

2SK1386-01 2SK1386-01

isc N-Channel MOSFET Transistor 2SK1386DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor

 8.1. Size:442K  toshiba
 2sk1381.pdf

2SK1386-01 2SK1386-01

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSIII) 2SK1381 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 25 m (typ.) DS (ON) High forward transfer admittance : |Y | = 33 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode

 8.2. Size:371K  toshiba
 2sk1380.pdf

2SK1386-01 2SK1386-01

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 8.3. Size:389K  toshiba
 2sk1382.pdf

2SK1386-01 2SK1386-01

2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSIII) 2SK1382 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 47 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-m

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 2sk1385-01r.pdf

2SK1386-01 2SK1386-01

 8.5. Size:171K  fuji
 2sk1384r.pdf

2SK1386-01 2SK1386-01

 8.6. Size:168K  fuji
 2sk1388.pdf

2SK1386-01 2SK1386-01

N-channel MOS-FET2SK1388F-III Series 30V 0,022 35A 60W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

 8.7. Size:64K  inchange semiconductor
 2sk1384.pdf

2SK1386-01 2SK1386-01

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1384 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage 20 V ID D

 8.8. Size:204K  inchange semiconductor
 2sk1385.pdf

2SK1386-01 2SK1386-01

isc N-Channel MOSFET Transistor 2SK1385DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 800 VDSS GS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: FRK260H

 

 
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