2SK2726 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2726
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 330 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220F
2SK2726 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2726 Datasheet (PDF)
2sk2726.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2723.pdf
DATA SHEETMOS Field Effect Power Transistors2SK2723SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEPACKAGE DIMENSIONS(in millimeter)DESCRIPTION4.5 0.2This product is N-Channel MOS Field Effect Transistor 10.0 0.33.2 0.2designed for high current switching spplications.2.7 0.2FEATURES Low On-ResistanceRDS (on) 1 = 40m Max. (VGS = 10 V, ID = 13 A)R
2sk2724.pdf
DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SK2724SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONS (in millimeter)This product is N-Channel MOS Field Effect Transistor4.5 0.2designed for high current switching applications.10.0 0.33.2 0.22.7 0.2FEATURES Low On-ResistanceRDS(on)1 = 27 m Max. (VGS = 10 V, ID = 18 A)RDS(on)
2sk2725.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2727.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2729.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2728.pdf
2SK2728Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-454 B3rd. EditionFeatures Low on-resistance High speed switching Low drive current Avalanche ratingsOutlineTO3PDG1. Gate2. Drain12 (Flange) 33. SourceS2SK2728Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to sour
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
