2SK3468-01 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3468-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO220AB
2SK3468-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3468-01 Datasheet (PDF)
2sk3468-01.pdf
2SK3468-01FUJI POWER MOSFET200303N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles
2sk3468.pdf
isc N-Channel MOSFET Transistor 2SK3468FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3462.pdf
2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV) 2SK3462 Switching Regulator, DC/DC Converter and Unit: mmMotor Drive Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 A (VDS = 250 V) Enhancement mode: V
2sk3466.pdf
2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3466 Chopper Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs
2sk3467.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3469-01mr.pdf
2SK3469-01MRFUJI POWER MOSFET200303N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
2sk346.pdf
isc N-Channel MOSFET Transistor 2SK346FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3469-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3469-01MRFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SLF60R380S2
