2SK3889-01L Specs and Replacement
Type Designator: 2SK3889-01L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO262
2SK3889-01L substitution
- MOSFET ⓘ Cross-Reference Search
2SK3889-01L datasheet
2sk3889-01l-s-sj.pdf
2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET 200406 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings ... See More ⇒
2sk3889s.pdf
isc N-Channel MOSFET Transistor 2SK3889S FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒
2sk3889l.pdf
isc N-Channel MOSFET Transistor 2SK3889L FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒
Detailed specifications: 2SK3479, 2SK3479-S, 2SK3479-Z, 2SK3479-ZJ, 2SK349, 2SK350, 2SK3501-01, 2SK3504-01, IRFP260, 2SK3889-01S, 2SK3889-01SJ, 2SK3891-01R, 2SK3899-ZK, 2SK3900-ZP, 2SK3901-ZK, 2SK3902-ZK, 2SK3774-01L
Keywords - 2SK3889-01L MOSFET specs
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