2SK3889-01SJ
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3889-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 165
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO263
2SK3889-01SJ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3889-01SJ
Datasheet (PDF)
4.1. Size:153K fuji
2sk3889-01l-s-sj.pdf 
2SK3889-01L,S,SJN-CHANNEL SILICON POWER MOSFET200406Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings
7.1. Size:357K inchange semiconductor
2sk3889s.pdf
isc N-Channel MOSFET Transistor 2SK3889SFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
7.2. Size:283K inchange semiconductor
2sk3889l.pdf
isc N-Channel MOSFET Transistor 2SK3889LFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
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