2SK1539 Datasheet and Replacement
Type Designator: 2SK1539
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 115 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: MTO3P
2SK1539 substitution
2SK1539 Datasheet (PDF)
2sk1530.pdf
2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mmHigh-Power Amplifier Application High breakdown voltage : VDSS = 200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 200 VGate-source voltage VGSS 20 V
Datasheet: 2SK1523 , 2SK1524 , 2SK1525 , 2SK1527-E1-E , 2SK1534 , 2SK1535 , 2SK1536 , 2SK1538 , CS150N03A8 , 2SK1542 , 2SK1929 , 2SK1941-01R , 2SK1942-01 , 2SK1809 , 2SK1944-01 , 2SK1945-01L , 2SK1945-01S .
History: FDD9511L-F085 | HTD1K5N10 | PE5B7BA | STD3NM60T4 | BLP065N10GL-P | HM8N20I | RXQ040N03
Keywords - 2SK1539 MOSFET datasheet
2SK1539 cross reference
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History: FDD9511L-F085 | HTD1K5N10 | PE5B7BA | STD3NM60T4 | BLP065N10GL-P | HM8N20I | RXQ040N03
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