2SK1539 Specs and Replacement
Type Designator: 2SK1539
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 115 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: MTO3P
2SK1539 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1539 datasheet
2sk1530.pdf
2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit mm High-Power Amplifier Application High breakdown voltage VDSS = 200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS 20 V... See More ⇒
Detailed specifications: 2SK1523, 2SK1524, 2SK1525, 2SK1527-E1-E, 2SK1534, 2SK1535, 2SK1536, 2SK1538, IRF520, 2SK1542, 2SK1929, 2SK1941-01R, 2SK1942-01, 2SK1809, 2SK1944-01, 2SK1945-01L, 2SK1945-01S
Keywords - 2SK1539 MOSFET specs
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