2SK1954-Z Datasheet and Replacement

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1958N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGThe 2SK1958 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm)it can be driven by a voltage as low as 1.5 V and it is not2.1 0.1necessary to consider a drive current, this FET is ideal as an1.25 0.1actuator for low-current portable systems such as headphonestereos and

2SK1957 Silicon N Channel MOS FET REJ03G0988-0200 (Previous: ADE-208-1336) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0003AD-A(Package name

2SK1952Silicon N Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low onresistance High speed switching212 Low drive current3 4 V gate drive device can be driven from15 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source Avalanche ratings3Table 1 Absolute Maximum Ratings (

SMD Type MOSFETN-Channel MOSFET2SK19591.70 0.1 Features VDS (V) = 16V ID = 2ADrain (D) RDS(ON) 3.2 (VGS = 1.5V)0.42 0.10.46 0.1 RDS(ON) 0.5 (VGS = 4V)InternalGate (G)diodeGate1.Gateprotection2.Draindiode3.SourceSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16