All MOSFET. 2SK1984-01MR Datasheet

 

2SK1984-01MR Datasheet and Replacement


   Type Designator: 2SK1984-01MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO220F
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2SK1984-01MR Datasheet (PDF)

 ..1. Size:192K  fuji
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2SK1984-01MR

2SK1984-01MR N-channel MOS-FETFAP-IIA Series 900V 4 3A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equival

 7.1. Size:212K  inchange semiconductor
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2SK1984-01MR

isc N-Channel MOSFET Transistor 2SK1984DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNI

 8.1. Size:433K  1
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2SK1984-01MR

 8.2. Size:31K  panasonic
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2SK1984-01MR

Power F-MOS FETs 2SK19802SK1980Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ3.4 0.38.5 0.26.0 0.5 1.0 0.1 VGSS=30V guaranteedHigh-speed switching : tf= 25nsNo secondary breakdown1.5max. 1.1max. ApplicationsNon-contact relay0.8 0.1 0.5max.Solenoid drive 2.54 0.3Motor drive5.08 0.5Control

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History: FTK730P | 2SK2745 | IRF7483M | HUFA76639S3S | KI2308DS | F11F60CPM | 3SK59

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