All MOSFET. 2SK1985-01MR Datasheet

 

2SK1985-01MR MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1985-01MR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: TO220F

2SK1985-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1985-01MR Datasheet (PDF)

1.1. 2sk1985-01mr.pdf Size:138K _update

2SK1985-01MR
2SK1985-01MR



4.1. 2sk1986-01.pdf Size:249K _update

2SK1985-01MR
2SK1985-01MR

FUJI POWER MOSFET 2SK1986-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c

4.2. 2sk1984-01mr.pdf Size:192K _update

2SK1985-01MR
2SK1985-01MR

2SK1984-01MR N-channel MOS-FET FAP-IIA Series 900V 4Ω 3A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equival

 4.3. 2sk1980.pdf Size:31K _panasonic

2SK1985-01MR
2SK1985-01MR

Power F-MOS FETs 2SK1980 2SK1980 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed : EAS > 15mJ 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 VGSS=30V guaranteed High-speed switching : tf= 25ns No secondary breakdown 1.5max. 1.1max. Applications Non-contact relay 0.8 0.1 0.5max. Solenoid drive 2.54 0.3 Motor drive 5.08 0.5 Control equipment

4.4. 2sk198.pdf Size:31K _panasonic

2SK1985-01MR
2SK1985-01MR

Silicon Junction FETs (Small Signal) 2SK198 2SK198 Silicon N-Channel Junction Unit : mm For low-frequency amplification +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High mutual conductance gm 1 Low noise type Downsizing of sets by mini-type package and automatic insertion by 3 taping/magazine packing are available. 2 Absolute Maximum Ratings (Ta = 25?C) Param

Datasheet: 2SK1941-01R , 2SK1942-01 , 2SK1809 , 2SK1944-01 , 2SK1945-01L , 2SK1945-01S , 2SK1954-Z , 2SK1984-01MR , IRF9540N , 2SK1986-01 , 2SK2807-01L , 2SK2807-01S , 2SK2808-01MR , 2SK2809-01MR , 2SK2857C , 2SK2858 , 2SK2880 .

 
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