2SK2858 Specs and Replacement

Type Designator: 2SK2858

Marking Code: G24

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSoff|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: SOT323

2SK2858 substitution

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2SK2858 datasheet

 ..1. Size:238K  renesas
2sk2858.pdf pdf_icon

2SK2858

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:55K  1
2sk2851.pdf pdf_icon

2SK2858

2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st. Edition Features Low on-resistance RDS(on) = 0.055 typ. (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A Outline TO-92MOD. D G 1. Source 3 2 2. Drain 1 3. Gate S 2SK2851 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to... See More ⇒

 8.2. Size:125K  toshiba
2sk2855.pdf pdf_icon

2SK2858

2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS 6 V Drain Current ID 1.0 A Drain Power Dissipation PD* 0.5 W Channel Temperature Tch 150 C Storage Temperature Range Tstg -55 150 C * ... See More ⇒

 8.3. Size:125K  toshiba
2sk2854.pdf pdf_icon

2SK2858

2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS 6 V Drain Current ID 0.5 A Drain Power Dissipation PD* 0.5 W Channel Temperature Tch 150 C Storage Temperature Range Tstg -55 150 C * ... See More ⇒

Detailed specifications: 2SK1984-01MR, 2SK1985-01MR, 2SK1986-01, 2SK2807-01L, 2SK2807-01S, 2SK2808-01MR, 2SK2809-01MR, 2SK2857C, IRFB7545, 2SK2880, 2SK2885L, 2SK2885S, 2SK2770-01, 2SK3516-01L, 2SK3516-01S, 2SK3516-01SJ, 2SK3517-01

Keywords - 2SK2858 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.