2SK3521-01SJ Specs and Replacement
Type Designator: 2SK3521-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO263
2SK3521-01SJ substitution
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2SK3521-01SJ datasheet
2sk3521-01l-01s-01sj.pdf
2SK3521-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power P4 Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
2sk3521s.pdf
isc N-Channel MOSFET Transistor 2SK3521S FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
2sk3521l.pdf
isc N-Channel MOSFET Transistor 2SK3521L FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
Detailed specifications: 2SK3516-01S, 2SK3516-01SJ, 2SK3517-01, 2SK3518-01MR, 2SK3519-01, 2SK3520-01MR, 2SK3521-01L, 2SK3521-01S, IRF740, 2SK3522-01, 2SK3524-01, 2SK3526-01L, 2SK3526-01S, 2SK3526-01SJ, 2SK3527-01, 2SK3528-01R, 2SK3529-01
Keywords - 2SK3521-01SJ MOSFET specs
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