2SK3526-01SJ Datasheet and Replacement
Type Designator: 2SK3526-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO263
2SK3526-01SJ substitution
2SK3526-01SJ Datasheet (PDF)
2sk3526-01l-01s-01sj.pdf

2SK3526-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3526s.pdf

isc N-Channel MOSFET Transistor 2SK3526SFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3526l.pdf

isc N-Channel MOSFET Transistor 2SK3526LFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
Datasheet: 2SK3520-01MR , 2SK3521-01L , 2SK3521-01S , 2SK3521-01SJ , 2SK3522-01 , 2SK3524-01 , 2SK3526-01L , 2SK3526-01S , 50N06 , 2SK3527-01 , 2SK3528-01R , 2SK3529-01 , 2SK3531-01 , 2SK3539 , 2SK3675-01 , 2SK3676-01L , 2SK3676-01S .
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