2SK3529-01 Specs and Replacement
Type Designator: 2SK3529-01
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 195
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 7
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 105
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9
Ohm
Package:
TO220AB
-
MOSFET ⓘ Cross-Reference Search
2SK3529-01 datasheet
..1. Size:112K fuji
2sk3529-01.pdf 
2SK3529-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
..2. Size:290K inchange semiconductor
2sk3529-01.pdf 
isc N-Channel MOSFET Transistor 2SK3529-01 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.1. Size:106K fuji
2sk3528.pdf 
2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise s... See More ⇒
8.2. Size:252K fuji
2sk3526-01l-01s-01sj.pdf 
2SK3526-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.3. Size:109K fuji
2sk3522-01.pdf 
2SK3522-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features 11.6 0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒
8.4. Size:254K fuji
2sk3521-01l-01s-01sj.pdf 
2SK3521-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power P4 Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
8.5. Size:107K fuji
2sk3527-01.pdf 
2SK3527-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features 11.6 0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒
8.6. Size:106K fuji
2sk3523.pdf 
2SK3523-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise ... See More ⇒
8.7. Size:103K fuji
2sk3520-01mr.pdf 
FUJI POWER MOSFET200303 2SK3520-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
8.8. Size:98K fuji
2sk3525.pdf 
FUJI POWER MOSFET 2SK3525-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwis... See More ⇒
8.9. Size:105K fuji
2sk3528-01r.pdf 
2SK3528-01R 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
8.10. Size:96K fuji
2sk3524-01.pdf 
FUJI POWER MOSFET 2SK3524-01 200304 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.11. Size:286K inchange semiconductor
2sk3522n.pdf 
isc N-Channel MOSFET Transistor 2SK3522N FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.12. Size:356K inchange semiconductor
2sk3526s.pdf 
isc N-Channel MOSFET Transistor 2SK3526S FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.13. Size:227K inchange semiconductor
2sk3527.pdf 
isc N-Channel MOSFET Transistor 2SK3527 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
8.14. Size:284K inchange semiconductor
2sk3523-01r.pdf 
isc N-Channel MOSFET Transistor 2SK3523-01R FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.15. Size:357K inchange semiconductor
2sk3521s.pdf 
isc N-Channel MOSFET Transistor 2SK3521S FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.16. Size:282K inchange semiconductor
2sk3526l.pdf 
isc N-Channel MOSFET Transistor 2SK3526L FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.17. Size:331K inchange semiconductor
2sk3522w.pdf 
isc N-Channel MOSFET Transistor 2SK3522W FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.18. Size:279K inchange semiconductor
2sk3525-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3525-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.19. Size:279K inchange semiconductor
2sk3520-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3520-01MR FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.20. Size:283K inchange semiconductor
2sk3521l.pdf 
isc N-Channel MOSFET Transistor 2SK3521L FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.21. Size:287K inchange semiconductor
2sk3528-01r.pdf 
isc N-Channel MOSFET Transistor 2SK3528-01R FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.37 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
8.22. Size:288K inchange semiconductor
2sk3524-01.pdf 
isc N-Channel MOSFET Transistor 2SK3524-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
Detailed specifications: 2SK3521-01SJ
, 2SK3522-01
, 2SK3524-01
, 2SK3526-01L
, 2SK3526-01S
, 2SK3526-01SJ
, 2SK3527-01
, 2SK3528-01R
, IRF640
, 2SK3531-01
, 2SK3539
, 2SK3675-01
, 2SK3676-01L
, 2SK3676-01S
, 2SK3676-01SJ
, 2SK3678-01
, 2SK3680-01
.
History: AGM056N10H
| 2SK1437
| TK16A60W
| DMP58D0LFB
| AGM16N10D
| AGM20P22AS
| IRHM7264SE
Keywords - 2SK3529-01 MOSFET specs
2SK3529-01 cross reference
2SK3529-01 equivalent finder
2SK3529-01 pdf lookup
2SK3529-01 substitution
2SK3529-01 replacement
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