2SK819 Datasheet. Specs and Replacement
Type Designator: 2SK819
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ -
Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO3P
- MOSFET ⓘ Cross-Reference Search
2SK819 datasheet
9.8. Size:289K inchange semiconductor
2sk810.pdf 
isc N-Channel MOSFET Transistor 2SK810 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
9.9. Size:279K inchange semiconductor
2sk811.pdf
isc N-Channel MOSFET Transistor 2SK811 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
9.10. Size:203K inchange semiconductor
2sk818a.pdf
isc N-Channel MOSFET Transistor 2SK818A DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay... See More ⇒
9.11. Size:279K inchange semiconductor
2sk817.pdf
isc N-Channel MOSFET Transistor 2SK817 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.12. Size:203K inchange semiconductor
2sk818.pdf
isc N-Channel MOSFET Transistor 2SK818 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒
Detailed specifications: 2SK3685-01, 2SK3686-01, 2SK3688-01L, 2SK3688-01S, 2SK3688-01SJ, 2SK3689-01, 2SK3690-01, 2SK3691-01MR, 2N7002, 2SK831, 2SK833, 2SK849, 2SK851, 2SK854, 2SK855, 2SK856, 2SK858
Keywords - 2SK819 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
