All MOSFET. IRF9Z24N Datasheet

 

IRF9Z24N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9Z24N

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.175 Ohm

Package: TO220AB

IRF9Z24N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF9Z24N Datasheet (PDF)

1.1. irf9z24npbf.pdf Size:2354K _upd-mosfet

IRF9Z24N
IRF9Z24N

PD - 94982 IRF9Z24NPbF • Lead-Free www.irf.com 1 IRF9Z24NPbF 2 www.irf.com IRF9Z24NPbF www.irf.com 3 IRF9Z24NPbF 4 www.irf.com IRF9Z24NPbF www.irf.com 5 IRF9Z24NPbF 6 www.irf.com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit * • • ƒ •

1.2. irf9z24nlpbf irf9z24nspbf.pdf Size:389K _upd-mosfet

IRF9Z24N
IRF9Z24N

PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS

 1.3. irf9z24ns.pdf Size:168K _international_rectifier

IRF9Z24N
IRF9Z24N

PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24NS) VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating Temperature RDS(on) = 0.175? P-Channel G Fast Switching ID = -12A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex

1.4. irf9z24n.pdf Size:109K _international_rectifier

IRF9Z24N
IRF9Z24N

PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast Switching RDS(on) = 0.175? P-Channel G Fully Avalanche Rated ID = -12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

Datasheet: IRF9Z10 , IRF9Z12 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9Z20 , IRF9Z22 , IRF9Z24 , IRFP260 , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , IRF9Z34N .

 
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