2SK3987-01SJ MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3987-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 3.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO263
2SK3987-01SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3987-01SJ Datasheet (PDF)
2sk3987-01s.pdf
isc N-Channel MOSFET Transistor 2SK3987-01SFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
2sk3987-01l-01s-01sj.pdf
2SK3987-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3987-01l.pdf
isc N-Channel MOSFET Transistor 2SK3987-01LFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N4416AC1A
History: 2N4416AC1A
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