2SK3511
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3511
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 83
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 100
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 810
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125
Ohm
Package:
TO220AB
2SK3511
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3511
Datasheet (PDF)
..1. Size:288K inchange semiconductor
2sk3511.pdf 
isc N-Channel MOSFET Transistor 2SK3511FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.1. Size:213K renesas
2sk3511-s-z-zj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.2. Size:357K inchange semiconductor
2sk3511-z.pdf
isc N-Channel MOSFET Transistor 2SK3511-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
0.3. Size:357K inchange semiconductor
2sk3511-zj.pdf
isc N-Channel MOSFET Transistor 2SK3511-ZJFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
0.4. Size:282K inchange semiconductor
2sk3511-s.pdf
isc N-Channel MOSFET Transistor 2SK3511-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Datasheet: IRFP360LC
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