All MOSFET. 2SK3511-Z Datasheet

 

2SK3511-Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3511-Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 83 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO263

 2SK3511-Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3511-Z Datasheet (PDF)

 ..1. Size:357K  inchange semiconductor
 2sk3511-z.pdf

2SK3511-Z 2SK3511-Z

isc N-Channel MOSFET Transistor 2SK3511-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 0.1. Size:357K  inchange semiconductor
 2sk3511-zj.pdf

2SK3511-Z 2SK3511-Z

isc N-Channel MOSFET Transistor 2SK3511-ZJFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 6.1. Size:213K  renesas
 2sk3511-s-z-zj.pdf

2SK3511-Z 2SK3511-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.2. Size:282K  inchange semiconductor
 2sk3511-s.pdf

2SK3511-Z 2SK3511-Z

isc N-Channel MOSFET Transistor 2SK3511-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF221

 

 
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