2SK3512-01SJ Datasheet and Replacement
Type Designator: 2SK3512-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO263
2SK3512-01SJ substitution
2SK3512-01SJ Datasheet (PDF)
2sk3512-01l-s-sj.pdf

http://www.fujielectric.com/products/semiconductor/2SK3512-01L,S,SJ FUJI POWER MOSFETSuper FAP-G Series N-CHANNEL SILICON POWER MOSFETOutline DrawingsFeaturesHigh speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proofApplicationsSwitching regulatorsP4UPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteris
2sk3512l.pdf

isc N-Channel MOSFET Transistor 2SK3512LFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3512s.pdf

isc N-Channel MOSFET Transistor 2SK3512SFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: 2SK3510-Z , 2SK3510-ZJ , 2SK3511 , 2SK3511-S , 2SK3511-Z , 2SK3511-ZJ , 2SK3512-01L , 2SK3512-01S , AON6380 , 2SK3513-01L , 2SK3513-01S , 2SK3513-01SJ , 2SK3556-01L , 2SK3556-01S , 2SK3556-01SJ , 2SK3694-01L , 2SK3694-01S .
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