2SK3513-01L
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3513-01L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 195
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75
Ohm
Package:
TO262
2SK3513-01L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3513-01L
Datasheet (PDF)
0.1. Size:259K fuji
2sk3513-01l-s-sj.pdf
2SK3513-01L,S,SJ200303FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
7.1. Size:357K inchange semiconductor
2sk3513s.pdf
isc N-Channel MOSFET Transistor 2SK3513SFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
7.2. Size:283K inchange semiconductor
2sk3513l.pdf
isc N-Channel MOSFET Transistor 2SK3513LFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
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, IRFP353
, 2SK3568
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