2SK3513-01SJ MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3513-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO263
2SK3513-01SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3513-01SJ Datasheet (PDF)
2sk3513-01l-s-sj.pdf
2SK3513-01L,S,SJ200303FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3513s.pdf
isc N-Channel MOSFET Transistor 2SK3513SFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3513l.pdf
isc N-Channel MOSFET Transistor 2SK3513LFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 15N65G-TQ2-T
