All MOSFET. 2SK3698-01 Datasheet

 

2SK3698-01 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3698-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.4 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: TO220AB

 2SK3698-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3698-01 Datasheet (PDF)

 ..1. Size:100K  fuji
2sk3698-01.pdf

2SK3698-01
2SK3698-01

2SK3698-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 ..2. Size:289K  inchange semiconductor
2sk3698-01.pdf

2SK3698-01
2SK3698-01

isc N-Channel MOSFET Transistor 2SK3698-01FEATURESDrain Current : I = 3.7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.1. Size:170K  toshiba
2sk369.pdf

2SK3698-01
2SK3698-01

2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. High |Y |: |Y | = 40 mS (typ.) (V = 10 V, V = 0, I = 5 mA) fs fs DS GS DSS High breakdown voltage: V = -40 V (min) GDS Super low noise: NF = 1.0dB (typ.) (V = 10

 8.2. Size:110K  fuji
2sk3696-01mr.pdf

2SK3698-01
2SK3698-01

2SK3696-01MR200309FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.3. Size:115K  fuji
2sk3697-01.pdf

2SK3698-01
2SK3698-01

2SK3697-01N-CHANNEL SILICON POWER MOSFET200407Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless

 8.4. Size:257K  fuji
2sk3694-01l-s-sj.pdf

2SK3698-01
2SK3698-01

2SK3694-01L,S,SJ200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]T-PackFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25

 8.5. Size:103K  fuji
2sk3692-01.pdf

2SK3698-01
2SK3698-01

2SK3692-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.6. Size:109K  fuji
2sk3695-01.pdf

2SK3698-01
2SK3698-01

2SK3695-01200309FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.7. Size:122K  fuji
2sk3690-01.pdf

2SK3698-01
2SK3698-01

2SK3690-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.8. Size:124K  fuji
2sk3691-01mr.pdf

2SK3698-01
2SK3698-01

2SK3691-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25

 8.9. Size:103K  fuji
2sk3699-01mr.pdf

2SK3698-01
2SK3698-01

2SK3699-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

 8.10. Size:103K  fuji
2sk3693-01mr.pdf

2SK3698-01
2SK3698-01

2SK3693-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un

 8.11. Size:289K  inchange semiconductor
2sk3692-01.pdf

2SK3698-01
2SK3698-01

isc N-Channel MOSFET Transistor 2SK3692-01FEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.12. Size:357K  inchange semiconductor
2sk3694-01sj.pdf

2SK3698-01
2SK3698-01

isc N-Channel MOSFET Transistor 2SK3694-01SJFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.13. Size:280K  inchange semiconductor
2sk3699-01mr.pdf

2SK3698-01
2SK3698-01

isc N-Channel MOSFET Transistor 2SK3699-01MRFEATURESDrain Current : I = 3.7A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.14. Size:283K  inchange semiconductor
2sk3694-01l.pdf

2SK3698-01
2SK3698-01

isc N-Channel MOSFET Transistor 2SK3694-01LFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.15. Size:357K  inchange semiconductor
2sk3694-01s.pdf

2SK3698-01
2SK3698-01

isc N-Channel MOSFET Transistor 2SK3694-01SFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.16. Size:280K  inchange semiconductor
2sk3693-01mr.pdf

2SK3698-01
2SK3698-01

isc N-Channel MOSFET Transistor 2SK3693-01MRFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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