IRF9Z32 Datasheet. Specs and Replacement

Type Designator: IRF9Z32  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO220AB

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IRF9Z32 substitution

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IRF9Z32 datasheet

 ..1. Size:41K  1
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IRF9Z32

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 8.1. Size:97K  1
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IRF9Z32

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 8.2. Size:262K  international rectifier
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IRF9Z32

PD- 96095 IRF9Z30PbF HEXFET POWER MOSFET Features P-Channel Verasatility Product Summary Compact Plastic Package Part Number VDS(V) RDSON ( ) ID (A) Fast Switching IRF9Z30PbF -50 0.14 -18 Low Drive Current Ease of Paralleling Excellent Temperature Stability D Lead-Free G S TO-220AB Description The HEXFET technology is the key to International Rectifier s advanced... See More ⇒

 8.3. Size:108K  international rectifier
irf9z34n.pdf pdf_icon

IRF9Z32

PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... See More ⇒

Detailed specifications: IRF9Z22, IRF9Z24, IRF9Z24N, IRF9Z24NL, IRF9Z24NS, IRF9Z24S, IRF9Z25, IRF9Z30, IRF530, IRF9Z34, IRF9Z34N, IRF9Z34NL, IRF9Z34NS, IRF9Z34S, IRF9Z35, IRFB11N50A, IRFB9N30A

Keywords - IRF9Z32 MOSFET specs

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