2SK2907-01R PDF and Equivalents Search

 

2SK2907-01R PDF Specs and Replacement


   Type Designator: 2SK2907-01R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO3PF
 

 2SK2907-01R substitution

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2SK2907-01R PDF Specs

 ..1. Size:97K  fuji
2sk2907-01r.pdf pdf_icon

2SK2907-01R

FUJI POWER MOS-FET 2SK2907-01R N-CHANNEL SILICON POWER MOS-FET TO-3PF Features 5.5 0.3 0.3 0.2 15.5 High speed switching 3.2 3.2+0.3 Low on-resistance No secondary breadown Low driving power Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 Applications 0.2 0.2 5.45 5.45 0.6+0.2 Switching regulators 1. Gate UPS (Uninterruptible Powe... See More ⇒

 4.1. Size:274K  inchange semiconductor
2sk2907-01.pdf pdf_icon

2SK2907-01R

isc N-Channel MOSFET Transistor 2SK2907-01 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

 8.1. Size:358K  1
2sk2908-01l 2sk2908-01s.pdf pdf_icon

2SK2907-01R

2SK2908-01L,S FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching T-pack(L) T-pack(S) Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25 ... See More ⇒

 8.2. Size:220K  sanyo
2sk2909.pdf pdf_icon

2SK2907-01R

Ordering number ENN6312 N-Channel Silicon MOSFET 2SK2909 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A 2.5V drive. [2SK2909] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol ... See More ⇒

Detailed specifications: 2SK2900-01 , 2SK2901-01L , 2SK2901-01S , 2SK2902-01MR , 2SK2903-01MR , 2SK2904-01 , 2SK2905-01R , 2SK2906-01 , 7N65 , 2SK3580-01MR , 2SK3581-01L , 2SK3581-01S , 2SK3581-01SJ , 2SK3586-01 , 2SK3587-01MR , 2SK3588-01L , 2SK3588-01S .

History: IRF9Z32 | NTF2955PT1G | FXN10N80F | NTF3055L108T1G | NTDV20P06L | 2SK3580-01MR | 3N325A

Keywords - 2SK2907-01R MOSFET specs

 2SK2907-01R cross reference
 2SK2907-01R equivalent finder
 2SK2907-01R pdf lookup
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 2SK2907-01R replacement

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