2SK3589-01 Specs and Replacement
Type Designator: 2SK3589-01
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 73 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
Qg ⓘ - Total Gate Charge: 52 nC
tr ⓘ - Rise Time: 35 nS
Cossⓘ -
Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TFP
- MOSFET ⓘ Cross-Reference Search
2SK3589-01 datasheet
..1. Size:90K fuji
2sk3589-01.pdf 
FUJI POWER MOSFET200303 2SK3589-01 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25 C ( unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schema... See More ⇒
8.1. Size:122K toshiba
2sk3582tk.pdf
2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 3 Characteristic Symbol Rating Unit 2 Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Storag... See More ⇒
8.3. Size:141K toshiba
2sk3582tv.pdf
2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Stora... See More ⇒
8.4. Size:105K fuji
2sk3580-01mr.pdf
2SK3580-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.5. Size:93K fuji
2sk3587-01mr.pdf
2SK3587-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒
8.6. Size:92K fuji
2sk3586-01.pdf
2SK3586-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.7. Size:246K fuji
2sk3588-01l-s-sj.pdf
2SK3588-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof See to p4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25... See More ⇒
8.8. Size:251K fuji
2sk3581-01l-s-sj.pdf
2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
8.9. Size:255K inchange semiconductor
2sk3580-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3580-01MR FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
8.10. Size:282K inchange semiconductor
2sk3581l.pdf
isc N-Channel MOSFET Transistor 2SK3581L FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.46 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.11. Size:279K inchange semiconductor
2sk3587-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3587-01MR FEATURES Drain Current I = 73A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
8.12. Size:356K inchange semiconductor
2sk3588s.pdf
isc N-Channel MOSFET Transistor 2SK3588S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.13. Size:356K inchange semiconductor
2sk3581s.pdf
isc N-Channel MOSFET Transistor 2SK3581S FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.46 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.14. Size:289K inchange semiconductor
2sk3586-01.pdf
isc N-Channel MOSFET Transistor 2SK3586-01 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.15. Size:282K inchange semiconductor
2sk3588l.pdf
isc N-Channel MOSFET Transistor 2SK3588L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
Detailed specifications: 2SK3581-01L
, 2SK3581-01S
, 2SK3581-01SJ
, 2SK3586-01
, 2SK3587-01MR
, 2SK3588-01L
, 2SK3588-01S
, 2SK3588-01SJ
, IRLB4132
, 2SK3590-01
, 2SK3591-01MR
, 2SK3592-01L
, 2SK3592-01S
, 2SK3592-01SJ
, 2SK3593-01
, 2SK3927-01L
, 2SK3927-01S
.
Keywords - 2SK3589-01 MOSFET specs
2SK3589-01 cross reference
2SK3589-01 equivalent finder
2SK3589-01 pdf lookup
2SK3589-01 substitution
2SK3589-01 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
