2SK3592-01L Datasheet. Specs and Replacement
Type Designator: 2SK3592-01L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO262
2SK3592-01L substitution
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2SK3592-01L datasheet
2sk3592-01l-s-sj.pdf
2SK3592-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof See to P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25... See More ⇒
2sk3592l.pdf
isc N-Channel MOSFET Transistor 2SK3592L FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 41m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
2sk3592s.pdf
isc N-Channel MOSFET Transistor 2SK3592S FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 41m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
Detailed specifications: 2SK3586-01, 2SK3587-01MR, 2SK3588-01L, 2SK3588-01S, 2SK3588-01SJ, 2SK3589-01, 2SK3590-01, 2SK3591-01MR, IRFP260, 2SK3592-01S, 2SK3592-01SJ, 2SK3593-01, 2SK3927-01L, 2SK3927-01S, 2SK3927-01SJ, 2SK3928-01, 2SK3930-01L
Keywords - 2SK3592-01L MOSFET specs
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