2SK3933-01SJ
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3933-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 165
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package:
TO263
2SK3933-01SJ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3933-01SJ
Datasheet (PDF)
..1. Size:356K inchange semiconductor
2sk3933-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3933-01SJFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 700m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
3.1. Size:356K inchange semiconductor
2sk3933-01s.pdf
isc N-Channel MOSFET Transistor 2SK3933-01SFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 700m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
4.1. Size:162K fuji
2sk3933-01l-s-sj.pdf
2SK3933-01L,S,SJN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratingsE
4.2. Size:282K inchange semiconductor
2sk3933-01l.pdf
isc N-Channel MOSFET Transistor 2SK3933-01LFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 700m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
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