2SK3604-01SJ Datasheet. Specs and Replacement
Type Designator: 2SK3604-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO263
2SK3604-01SJ substitution
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2SK3604-01SJ datasheet
2sk3604-01l-s-sj.pdf
2SK3604-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
2sk3604s.pdf
isc N-Channel MOSFET Transistor 2SK3604S FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
2sk3604l.pdf
isc N-Channel MOSFET Transistor 2SK3604L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
Detailed specifications: 2SK3600-01L, 2SK3600-01S, 2SK3600-01SJ, 2SK3601-01, 2SK3602-01, 2SK3603-01MR, 2SK3604-01L, 2SK3604-01S, IRF520, 2SK3605-01, 2SK3606-01, 2SK3608-01L, 2SK3608-01S, 2SK3608-01SJ, 2SK3609-01, AF1332N, AF1333P
Keywords - 2SK3604-01SJ MOSFET specs
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