2SK3609-01 Datasheet. Specs and Replacement
Type Designator: 2SK3609-01
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ -
Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TFP
- MOSFET ⓘ Cross-Reference Search
2SK3609-01 datasheet
..1. Size:105K fuji
2sk3609-01.pdf 
2SK3609-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings Foot Print Pattern (... See More ⇒
8.1. Size:68K renesas
2sk360.pdf
2SK360 Silicon N-Channel MOS FET REJ03G0811-0200 (Previous ADE-208-1170) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Gate 3 2. Drain 3. Source 1 2 Rev.2.00, Aug 10.2005, page 1 of 5 2SK360 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSX*1 20 V G... See More ⇒
8.2. Size:97K fuji
2sk3601-01.pdf
2SK3601-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Foot Print Pattern Absolute maximum ratings ... See More ⇒
8.3. Size:255K fuji
2sk3608-01l-s-sj.pdf
2SK3608-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.4. Size:101K fuji
2sk3606-01.pdf
2SK3606-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.5. Size:102K fuji
2sk3603-01mr.pdf
2SK3603-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒
8.6. Size:105K fuji
2sk3607-01mr.pdf
2SK3607-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒
8.7. Size:103K fuji
2sk3605-01.pdf
2SK3605-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings Foot Print Pattern (... See More ⇒
8.8. Size:247K fuji
2sk3600-01l-s-sj.pdf
2SK3600-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.9. Size:253K fuji
2sk3604-01l-s-sj.pdf
2SK3604-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.10. Size:99K fuji
2sk3602-01.pdf
2SK3602-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.11. Size:282K inchange semiconductor
2sk3608l.pdf
isc N-Channel MOSFET Transistor 2SK3608L FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.12. Size:357K inchange semiconductor
2sk3604s.pdf
isc N-Channel MOSFET Transistor 2SK3604S FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.13. Size:288K inchange semiconductor
2sk3606-01.pdf
isc N-Channel MOSFET Transistor 2SK3606-01 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.14. Size:356K inchange semiconductor
2sk3600s.pdf
isc N-Channel MOSFET Transistor 2SK3600S FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.15. Size:280K inchange semiconductor
2sk3603-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3603-01MR FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
8.16. Size:279K inchange semiconductor
2sk3607-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3607-01MR FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
8.17. Size:356K inchange semiconductor
2sk3608s.pdf
isc N-Channel MOSFET Transistor 2SK3608S FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.18. Size:282K inchange semiconductor
2sk3600l.pdf
isc N-Channel MOSFET Transistor 2SK3600L FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.19. Size:283K inchange semiconductor
2sk3604l.pdf
isc N-Channel MOSFET Transistor 2SK3604L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.20. Size:289K inchange semiconductor
2sk3602-01.pdf
isc N-Channel MOSFET Transistor 2SK3602-01 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
Detailed specifications: 2SK3604-01L, 2SK3604-01S, 2SK3604-01SJ, 2SK3605-01, 2SK3606-01, 2SK3608-01L, 2SK3608-01S, 2SK3608-01SJ, P60NF06, AF1332N, AF1333P, 2SK1408, 2SK1409, 2SK1410, 2SK1411, 2SK1476, 2SK1477
Keywords - 2SK3609-01 MOSFET specs
2SK3609-01 cross reference
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2SK3609-01 pdf lookup
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2SK3609-01 replacement
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