All MOSFET. 2SK1409 Datasheet

 

2SK1409 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1409
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO3PN

 2SK1409 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1409 Datasheet (PDF)

 ..1. Size:201K  inchange semiconductor
2sk1409.pdf

2SK1409
2SK1409

isc N-Channel MOSFET Transistor 2SK1409DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen

 8.1. Size:83K  renesas
2sk1400.pdf

2SK1409
2SK1409

2SK1400, 2SK1400A Silicon N Channel MOS FET REJ03G0940-0200 (Previous: ADE-208-1280) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name:

 8.2. Size:93K  renesas
2sk1405.pdf

2SK1409
2SK1409

2SK1405 Silicon N Channel MOS FET REJ03G0945-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast diode (trr = 140 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D

 8.3. Size:82K  renesas
2sk1402.pdf

2SK1409
2SK1409

2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name:

 8.4. Size:81K  renesas
2sk1404.pdf

2SK1409
2SK1409

2SK1404 Silicon N Channel MOS FET REJ03G0944-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3

 8.5. Size:98K  renesas
rej03g0943 2sk1403ads.pdf

2SK1409
2SK1409

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:95K  renesas
rej03g0944 2sk1404ds.pdf

2SK1409
2SK1409

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:33K  panasonic
2sk1406.pdf

2SK1409
2SK1409

Power F-MOS FETs 2SK14062SK1406Silicon N-Channel Power F-MOSUnit : mm FeaturesLow ON-resistance RDS(on) : RDS(on)= 0.32(typ)15.0 0.3 5.0 0.2High-speed switching : tf =140ns(typ)11.0 0.2 3.2No secondary breakdown3.2 0.1High breakdown voltage, large allowable power dissipation Applications2.0 0.22.0 0.1 Non-contact relaySolenoid drive 1.1 0.1 0.6

 8.8. Size:40K  hitachi
2sk1403-a.pdf

2SK1409
2SK1409

2SK1403, 2SK1403ASilicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1403, 2SK1403AAbsolute Maximum Ratings (Ta = 25C)Item Symb

 8.9. Size:49K  hitachi
2sk1401 2sk1401a.pdf

2SK1409
2SK1409

2SK1401, 2SK1401ASilicon N-Channel MOS FETADE-208-1281 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1401, 2SK1401AAbsol

 8.10. Size:203K  inchange semiconductor
2sk1403.pdf

2SK1409
2SK1409

isc N-Channel MOSFET Transistor 2SK1403DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

 8.11. Size:199K  inchange semiconductor
2sk1402a.pdf

2SK1409
2SK1409

isc N-Channel MOSFET Transistor 2SK1402ADESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

 8.12. Size:203K  inchange semiconductor
2sk1403a.pdf

2SK1409
2SK1409

isc N-Channel MOSFET Transistor 2SK1403ADESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 8.13. Size:199K  inchange semiconductor
2sk1402.pdf

2SK1409
2SK1409

isc N-Channel MOSFET Transistor 2SK1402DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

 8.14. Size:203K  inchange semiconductor
2sk1401a.pdf

2SK1409
2SK1409

isc N-Channel MOSFET Transistor 2SK1401ADESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

 8.15. Size:202K  inchange semiconductor
2sk1408.pdf

2SK1409
2SK1409

isc N-Channel MOSFET Transistor 2SK1408DESCRIPTIONDrain Current I =16A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen

 8.16. Size:207K  inchange semiconductor
2sk1401.pdf

2SK1409
2SK1409

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1401DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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