All MOSFET. IRFB9N65A Datasheet

 

IRFB9N65A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB9N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48(max) nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.93 Ohm
   Package: TO220AB

 IRFB9N65A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB9N65A Datasheet (PDF)

Datasheet: IRF9Z34N , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFZ46N , IRFBA1404 , IRFBA22N50A , IRFBA35N60C , IRFBC20 , IRFBC20L , IRFBC20S , IRFBC30 , IRFBC30A .

 

 
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