2SK3612-01SJ Datasheet and Replacement
Type Designator: 2SK3612-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 2.7 nS
Cossⓘ - Output Capacitance: 88 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO263
- MOSFET Cross-Reference Search
2SK3612-01SJ Datasheet (PDF)
2sk3612-01l-s-sj.pdf

2SK3612-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsP4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3612l.pdf

isc N-Channel MOSFET Transistor 2SK3612LFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3612s.pdf

isc N-Channel MOSFET Transistor 2SK3612SFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Datasheet: 2SK3596-01L , 2SK3596-01S , 2SK3596-01SJ , 2SK3597-01 , 2SK3610-01 , 2SK3611-01MR , 2SK3612-01L , 2SK3612-01S , IRF740 , 2SK3613-01 , 2SK3644-01 , 2SK3646-01L , 2SK3646-01S , 2SK3646-01SJ , 2SK3647-01 , 2SK3648-01 , 2SK3649-01MR .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - 2SK3612-01SJ MOSFET datasheet
2SK3612-01SJ cross reference
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History: 2SJ473-01S | IRF7759L2TR1PBF



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